Ballistic electron transport calculation of strained germanium-tin fin field-effect transistors
Journal
Applied Physics Letters
Journal Volume
104
Journal Issue
19
Date Issued
2014
Author(s)
Abstract
The dependence of ballistic electron current on Sn content, sidewall orientations, fin width, and uniaxial stress is theoretically studied for the GeSn fin field-effect transistors. Alloying Sn increases the direct Г valley occupancy and enhances the injection velocity at virtual source node. (112¯) sidewall gives the highest current enhancement due to the rapidly increasing Г valley occupancy. The non-parabolicity of the Г valley affects the occupancy significantly. However, uniaxial tensile stress and the shrinkage of fin width reduce the Г valley occupancy, and the currents are enhanced by increasing occupancy of specific indirect L valleys with high injection velocity.
Type
journal article