Skip to main content
English
中文
Log In
Log in
Log in with ORCID
NTU Single Sign On
Have you forgotten your password?
Home
College of Electrical Engineering and Computer Science / 電機資訊學院
Electrical Engineering / 電機工程學系
Ballistic electron transport calculation of strained germanium-tin fin field-effect transistors
Details
Ballistic electron transport calculation of strained germanium-tin fin field-effect transistors
Journal
Applied Physics Letters
Journal Volume
104
Journal Issue
19
Date Issued
2014
Author(s)
CHEE-WEE LIU
Lan, H.-S.
CHEE-WEE LIU
DOI
10.1063/1.4876441
URI
http://www.scopus.com/inward/record.url?eid=2-s2.0-84900869980&partnerID=MN8TOARS
http://scholars.lib.ntu.edu.tw/handle/123456789/387390
Type
journal article