Orientation controlled silicon nanowires (SiNWs) have been synthesized under the effect of the electric field via low pressure chemical vapor deposition system. The p-type impurities are used to dope SiNWs and change their resistivity. The electrical characteristics of SiNWs with different doping concentrations are measured by four-points probe method. The possibility of application of SiNWs to the analog circuit is proposed.
