奈米結構性寬能隙氮化物暨其他發光器件用半導體材料的磊晶和缺陷工程
Date Issued
2005-10-31
Date
2005-10-31
Author(s)
馮哲川
DOI
932215E002035
Abstract
This report reviews the performance on
the project NSC 93-2218-E-002-011, Epitaxy
and Defects Engineering of Nano-structural Wide
Gap III-Nitrides and Related Semiconducting
Materials for Light Emitting Devices for
8/1/2004 – 10/31/2005. In this period, P.I.
(and collaborators as well as students) have
published 1 specialized book [1], 1 review
book chapter [2], 9 journal papers to be listed
in SCI [3-11], and more
conference/proceeding papers. Main results
and achievements include: A) recombination
mechanism and defects from InGaN/GaN
multiple quantum well (MQW) grown on
sapphire by MOCVD, B) defects and
influence from the MOCVD- grown
GaN-based blue-green LEDs, C) effects of
p-type doping and annealing for GaN grown
by MOCVD, D) cracking control and
improvement of GaN films grown on Si by
MOCVD, E) photoluminescence features of
low indium composition InGaN alloys grown
by MOCVD, F) defect features and
optical/transport properties of epitaxial InSb
on GaAs by MOCVD, G) optical properties
of CVD-grown cubic SiC thin films on Si
substrates, H) defects and optical properties
of MOCVD-grown InAlGaP materials for
visible LED application, I) the publication of
a specialized review book on SiC power
materials and devices, and J) good trainings
for more than 10 graduate students.
Subjects
MOCVD epitaxy
defects
engineering
engineering
GaN
InGaN
quantum wells
p-type doping
SiC
AlInGaP
InSb
GaAs
Publisher
臺北市：國立臺灣大學光電工程學研究所
Type
report
File(s)![Thumbnail Image]()
Loading...
Name
932215E002035.pdf
Size
194.99 KB
Format
Adobe PDF
Checksum
(MD5):1fdb4012d5839badb27afd7ff806043a