Schottky barrier Germanium Channel MOSFET and Temperature dependence of Nickel-Germanide Formation and Strain Induced effect on MOS Capacitor
Date Issued
2007
Date
2007
Author(s)
Huang, Shun-Hung
DOI
en-US
Abstract
In this work, we will introduce and discuss three important topics of advancement of metal-oxide-semiconductor field-effect transistors technology which are Schottky-barrier germanium channel MOSFET, Nickel-germanide, and Strain induced effect.
By using Si-cap/ε-Ge/Si substrate, we can get Germanium channel. And Platinum (Pt) is deposited as metal Schottky-barrier source/drain of p-type MOSFET. The devices are fabricated by three mask process and overcome some shortcomings from one mask process. Some useful concepts and adjustments are also provided to improve the performance of the process.
Formation of electrical contacts in Ge-based MOSFETs have been studied, nickel monogermanide (NiGe) is certainly advantageous for its use as contact material in Ge-based devices. The variation of Ni/Ge structure on different orientation substrate as a function of annealing temperature will be shown and discussed.
We built up a mechanical setup to apply external uniaxial and biaxial tensile strain. By measuring flat-band voltage shift of MOS capacitor on the (110) orientation Si under strain conditions, the reduction of conduction band and the upward shift of valence band edge were observed. Moreover, we done the same experiment on the (110) orientation Si and discuss flat-band voltage shift of MOS capacitor under biaxial strain.
Subjects
金氧半電晶體
鍺通道場效電晶體
蕭特基能障
鎳金屬鍺化物
MOSFET
Ge-channel MOSFET
Schottky-barrier
Nickel-germanide
Strain
Type
thesis
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