Demonstration of HOT photoresponse of MWIR T2SLs InAs/InAsSb photoresistors
Journal
Bulletin of the Polish Academy of Sciences: Technical Sciences
Journal Volume
67
Journal Issue
1
Pages
141-145
Date Issued
2019
Author(s)
Abstract
We report on the photoresponse of mid-wavelength infrared radiation (MWIR) type-II superlattices (T2SLs) InAs/InAsSb high operating temperature (HOT) photoresistor grown on GaAs substrate. The device consists of a 200 periods of active layer grown on GaSb buffer layer. The photoresistor reached a 50% cut-off wavelength of 5 μ m and 6 μ m at 200 K and 300 K respectively. The time constant of 30 ns is observed at 200 K under 1 V bias. This is the first observation of the photoresponse in MWIR T2SLs InAs/InAsSb above 200 K.
Type
journal article