Design and Implementation of CMOS Wideband Low Noise Amplifiers for Ultra Wideband Receiver
Date Issued
2004
Date
2004
Author(s)
Chen, Kuan-Hung
DOI
en-US
Abstract
Ultra wideband (UWB) system is the next generation communication technology for wireless personal area networks (WPAN). Although the standard of UWB has not been finalized, many proposed researches target at the band from 3.1 GHz to 10.6GHz. The low noise amplifier (LNA) of UWB RF front-end should possess wideband characteristics. This thesis presents two wideband amplifiers for UWB applications using 0.18μm 1P6M CMOS process. The first chip is a 3.1~10.6GHz CMOS cascaded two-stage distributed amplifier. This circuit using cascaded two-stage topology achieves better gain-bandwidth product performance than the conventional CMOS distributed amplifiers. The simulated gain is 18dB with ±1dB gain flatness over 3.1~10.6GHz bands. Input and output matchings are 50Ω, and the return losses of input and output are below -10dB and -9dB respectively. The power dissipation is 54mW with 1.8V power supply and the chip area is 2.2 x 1mm2. The second chip is a 3~5GHz wideband LNA. This circuit accomplishes low power and wideband characteristics by employing a current reuse structure and arranging the resonant frequencies in stagger. This chip has a gain of 18dB and noise figure less than 3dB over 3~5GHz from post-layout simulation. The power dissipation is 11.3mW with 1.8V power supply and the chip area is 1 x 0.9mm2. All the chips are verified with post-layout simulation and the measurement results of the second chip are also presented.
Subjects
超寬頻系統
3.1~10.6GHz
串接式雙級分散放大器
寬頻低雜訊放大器
CMOS
3~5GHz
CTDA
UWB
WBLNA
stagger-tuning
current reuse
Ultra wideband
Type
thesis
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