0.8V CMOS Content-Addressable-Memory (CAM) Cell Ciurcuit with a Fast Tag-Compare Capability Using Bulk PMOS Dynamic-Threshold (BP-DTMOS) Technique Based on Standard CMOS Technology for Low-Voltage VLSI Systems
Journal
International Symposium on Circuits and Systems (ISCAS) Proceedings
Pages
IV 583-586
Date Issued
2002-05
Author(s)
Type
conference paper