Photovoltaic characteristics of MOS structure with photo enhanced trap assist tunneling current by oxide etching
Journal
International NanoElectronics Conference, INEC
Date Issued
2011
Author(s)
Abstract
In this work, MOS photovoltaic mechanism with side wall trap-assist tunneling path by oxide etching was demonstrated. It was clearly observed that the photo response of device with oxide etching is tremendously enhanced with respect to that without. The efficiency of MOS photovoltaic with side wall trap-assist tunneling is strongly dependent on the etched potion of oxide. The perimeter of electrode is critical for MOS photovoltaic application. © 2011 IEEE.
Subjects
photovoltaic; side wall; trap assist tunneling
SDGs
Other Subjects
MOS structure; Oxide etching; Photoresponses; photovoltaic; Photovoltaic applications; Photovoltaic characteristics; Side walls; Tunneling current; Tunneling paths; Etching; Nanoelectronics; Photovoltaic effects
Type
conference paper