High Frequency Film Bulk Acoustic Wave Filter Using AlN as the Piezoelectric Layer
Date Issued
2007
Date
2007
Author(s)
Lu, Yi-Chang
DOI
zh-TW
Abstract
Due to the great demands posed by mobile communication systems and sensor network systems, smaller, cheaper, and more efficient devices are required. However, passive elements, such as inductors, usually suffer from great loss in silicon substrate. A thin film bulk acoustic wave resonator (FBAR) is a solution for this problem because of its high-Q, smaller volume, and integration compatibility. Meanwhile, it has been demonstrated that at higher frequencies a filter composed of FBARs is superior to a surface acoustic wave (SAW) filter and ceramic filter. The foci of this thesis are Film Bulk Acoustic Wave Filters (FBAW Filter) and CMOS integrated circuits. I will demonstrate that using AlN piezoelectric film produces Film Bulk Acoustic Wave Filters. Growing piezoelectric thin film plays a very important role in FBAR. We use sputtering method to grow AlN thin film. The advantage of a low temperature process, in which IC manufacturing is not performed at high temperature, is that it avoids harming the circuit. A sputtering temperature that can be controlled at 300 ° C below, is the best option. To sputtering with good C-axis Preferred Orientation, we must identify good manufacturing parameters. The parameters are very important factors in determining the direction of the lattice films. The parameters include chip temperature, chip to target distance, nitrogen and argon ratio of the gas flow, power, pressure, pre-sputtering and sputtering time. The means of accurately controlling the parameters are the key technologies in this study. Integrated filter and other circuit is complete single-chip system integration before the pass. Therefore, future development must first stem from the small size, low-loss, high Q-value, and affordable high-power filter. Subsequently, there can be further integration of the optimal quality of the filter with other microwave components, to achieve the final goal of a system on a chip (SOC).
Subjects
薄膜體聲波共振器
薄膜體聲波濾波器
氮化鋁壓電薄膜
系統單晶片
FBAR
FBAR filter
AlN
SOC
Type
thesis
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