Subpicosecond carrier lifetimes in arsenic-ion-implanted GaAs
Journal
Applied Physics Letters
Journal Volume
67
Pages
3465-
Date Issued
1995
Author(s)
Abstract
We have investigated photoexcited carrier lifetimes in arsenic-ion-implanted semi-insulating GaAs by time-resolved reflectivity measurements. Subpicosecond carrier lifetimes (220 to 550 fs) which do not exhibit apparent dosage dependence for samples bombarded with 200 keV arsenic ions at increasing dosages in the range of 1012 and 1016 ions/cm2 are reported. The shortest carrier lifetime was observed for the sample irradiated at 1013 ions/cm−2. These are the shortest lifetimes ever observed for ion-damaged GaAs and comparable to those of low-temperature molecular beam epitaxially grown GaAs, which is also nonstoichiometric with excess-arsenic-related, deep-level defects.
Type
journal article