Closed-form analytical drain current model considering energy transport and self-heating for short-channel fully-depleted SOI NMOS devices with lightly-doped drain structure biased in strong inversion
Journal
IEEE Transactions on Electron Devices
Journal Volume
49
Journal Issue
12
Pages
2193-2203
Date Issued
2002-12
Author(s)
Abstract
This paper reports a closed-form analytical drain current model considering energy transport and self-heating for short-channel fully-depleted (FD) SOI NMOS devices with lightly-doped drain (LDD) structure. As verified by the two-dimensional (2-D) simulation results, the analytical drain current model considering energy transport and self-heating provides an accurate prediction of the drain current behavior of the 0.25-/spl mu/m FD SOI NMOS device with and without an LDD structure. From the analytical model, with the LDD structure, the device has a smaller effective electron mobility at a low drain voltage, where lattice temperature is dominant, and a higher effective mobility at a high drain voltage, where electron temperature dominates, as compared to the non-LDD device.
SDGs
Type
journal article