Enhanced Internal-Quantum Efficiency of GaN-based Light-Emitting Diodes with a Larger Post-Duty Cycle of Patterned-Sapphire Substrates
Journal
2017 The Conference on Lasers and Electro-Optics (CLEO 2017)
Date Issued
2017
Author(s)
Vin-Cent Su
Po-Hsun Chen
Ta-Cheng Hsu
Yu-Yao Lin
Chieh-Hsiung Kuan
CHIEH-HSIUNG KUAN
Abstract
This paper reports the improvement of internal-quantum efficiency in GaN-based light-emitting diodes grown on the 2000-nm-period patterned-sapphire substrates with a larger post-duty cycle under the same etching depth.
SDGs
Type
conference paper