CMOS compatible Infrared sensor by cytochrome c protein
Date Issued
2014
Date
2014
Author(s)
Liao, Chien-Jen
Abstract
The uncooled infrared microbolometers have drawn significant attention for a variety of applications recently. Various fabrication processes and materials for microbolometer have been developed for past decades. In this paper, we designed an inkjet printing process to deposit cytochrome c protein on top of aluminum which is compatible with the standard CMOS process. The aluminum split structure is thermal insulated from the substrate by a SU-8 photoresist layer. The high temperature coefficient of resistance of cytochrome c thin film was suitable for infrared sensing. The 1/f noise value of the cytochrome c thin film was 3.04 × 〖10〗^(-11) V^2/Hz at 10 Hz. The measured voltage difference on the protein-based microbolometer with fabricated read-out integrated circuits was 0.32-0.46 Volts per 0.25°C increments. The calculated NETD value of optimized pixel is 0.246K. We believe that this approach provide an inexpensive and standard CMOS fabrication process to lower the high cost of microbolometers in future.
Subjects
微熱輻射感測器
細胞色素C
蛋白質
電阻溫度係數
壓電式噴墨機
Type
thesis
File(s)![Thumbnail Image]()
Loading...
Name
ntu-103-R00941089-1.pdf
Size
23.32 KB
Format
Adobe PDF
Checksum
(MD5):0dac05bae4a72fdf2c281ef771205b69