Multilayer MoS2 prepared by one-time and repeated chemical vapor depositions: Anomalous Raman shifts and transistors with high ON/OFF ratio

Journal

Journal of Physics D: Applied Physics

Journal Volume

48

Journal Issue

43

Date Issued

2015

Author(s)

Wu, C.-R.

Chang, X.-R.

Chang, S.-W.

Chang, C.-E.

Wu, C.-H.

Lin, S.-Y.

DOI

10.1088/0022-3727/48/43/435101

URI

http://www.scopus.com/inward/record.url?eid=2-s2.0-84946100961&partnerID=MN8TOARS

http://scholars.lib.ntu.edu.tw/handle/123456789/390974

Type

journal article