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College of Engineering / 工學院
Engineering Science and Ocean Engineering / 工程科學及海洋工程學系
Doping concentration and surface morphology of 4H-SiC C-face epitaxial growth
Details
Doping concentration and surface morphology of 4H-SiC C-face epitaxial growth
Journal
Materials Science Forum
Journal Volume
645-648
Pages
123-126
Date Issued
2010
Author(s)
Lee, K.-Y.
Lee, S.-Y.
KUNG-YEN LEE
DOI
10.4028/www.scientific.net/MSF.645-648.123
URI
https://scholars.lib.ntu.edu.tw/handle/123456789/451528
URL
https://www.scopus.com/inward/record.uri?eid=2-s2.0-77955460033&doi=10.4028%2fwww.scientific.net%2fMSF.645-648.123&partnerID=40&md5=8d44f00f6199db5d5a0a96a78d983a80
Type
conference paper