C-V and G-V characterisation of Ga2O3(Gd2O3)/GaN capacitor with low interface state density
Journal
Electronics Letters
Journal Volume
37
Journal Issue
9
Pages
595-597
Date Issued
2001
Author(s)
Abstract
A MOS capacitor formed by electron-beam deposition of Ga2O3(Gd2O3) on GaN has been characterised by C-V and G-V measurements at high AC frequencies of 1000, 100 and 10 KHz. An accurate C-V relation has been obtained consistently by using a model that includes both series and shunt parasitic resistances. The results indicate a fixed oxide charge density of ~3.0 × 1011 cm-2, and a minimum interface state density of ~4.2 × 1011 cm-2 eV-1 at the Ga2O3(Gd2O3)/GaN interface.
Type
journal article