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College of Science / 理學院
Physics / 物理學系
C-V and G-V characterisation of Ga<inf>2</inf>O<inf>3</inf>(Gd<inf>2</inf>O<inf>3</inf>)/GaN capacitor with low interface state density
Details
C-V and G-V characterisation of Ga2O3(Gd2O3)/GaN capacitor with low interface state density
Journal
Electronics Letters
Journal Volume
37
Journal Issue
9
Pages
595-597
Date Issued
2001
Author(s)
Lay, T.S.
Liu, W.D.
MINGHWEI HONG
Kwo, J.
Mannaerts, J.P.
DOI
10.1049/el:20010403
URI
https://scholars.lib.ntu.edu.tw/handle/123456789/443475
URL
https://www.scopus.com/inward/record.uri?eid=2-s2.0-0035953718&doi=10.1049%2fel%3a20010403&partnerID=40&md5=701204b81af2948e2455e454fe8ce52e
Type
journal article