Pressure effect on f
Journal
Physical Review B - Condensed Matter and Materials Physics
Journal Volume
53
Journal Issue
17
Pages
11855-11859
Date Issued
1996
Author(s)
Huang, C.
Abstract
The pressure effects on the superconducting transition temperature ((Formula presented)/dP) have been systematically measured for a series of ((Formula presented)(Formula presented))(Formula presented)(Formula presented)(Formula presented) with x ranging from 0 to 0.3. It has been found that (Formula presented)/dP<0 for x=0, 0.2, and 0.3, and (Formula presented)/dP≳0 for x=0.05, 0.075, 0.1, and 0.15. We have unexpectedly observed a pressure-induced increase in the normal state resistivity for x=0.2 and 0.3, suggesting a decrease of the carrier concentration under pressure. Making use of the concept of pressure-induced charge transfer incorporated in the model of hole depletion by Pr doping, we have proposed a phenomenological model, which has successfully explained the x dependences of (Formula presented)/dP and (Formula presented). © 1996 The American Physical Society.
Type
journal article