Broadband tunability of external-cavity semiconductor lasers for optical communication
Resource
Lasers and Electro-Optics Society, 2001. LEOS 2001. The 14th Annual Meeting of the IEEE
Journal
Lasers and Electro-Optics Society Annual Meeting-LEOS
Journal Volume
2
Pages
546-547
Date Issued
Nov-01
Date
Nov-01
Author(s)
DOI
N/A
Abstract
Broadband tunability of external-cavity semiconductor lasers was investigated for optical communication. The semiconductor optical amplifiers (SOA) were used in the external cavity of the layer structure. The tuning range for using SOAs with the layer structure was found to be narrower. The carrier distribution and different capture ability of quantum wells limited the tunability after 1450 nm increase of threshold.
Other Subjects
Bandwidth; Laser tuning; Light amplifiers; Optical communication; Optical waveguides; Semiconductor doping; Semiconductor quantum wells; Substrates; Broadband tunability; Quantum well lasers
Type
journal article
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