Reducing Domain Density Enhances Conversion Efficiency in GeTe
Journal
Small
Journal Volume
20
Journal Issue
31
Start Page
2312206
ISSN
16136810
Date Issued
2024
Author(s)
Abstract
Incorporating dilute doping and controlled synthesis provides a means to modulate the microstructure, defect density, and transport properties. Transmission electron microscopy (TEM) and geometric phase analysis (GPA) have revealed that hot-pressing can increase defect density, which redistributes strain and helps prevent unwanted Ge precipitates formation. An alloy of GeTe with a minute amount of indium added has shown remarkable TE properties compared to its undoped counterpart. Specifically, it achieves a maximum figure-of-merit zT of 1.3 at 683 K and an exceptional TE conversion efficiency of 2.83% at a hot-side temperature of 723 K. Significant zT and conversion efficiency improvements are mainly due to domain density engineering facilitated by an effective hot-pressing technique applied to lightly doped GeTe. The In–GeTe alloy exhibits superior TE properties and demonstrates notable stability under significant thermal gradients, highlighting its promise for use in mid-temperature TE energy generation systems. © 2024 Wiley-VCH GmbH.
Subjects
conversion efficiency
defect density
dilute doping
figure-of-merit
GeTe
strain
SDGs
Publisher
John Wiley and Sons Inc
Description
論文編號: 2312206
Type
journal article