Fabrication and Characterization of Ge-on-Insulator
Date Issued
2007
Date
2007
Author(s)
Chiang, Yen-Te
DOI
en-US
Abstract
In this thesis, the thin film germanium layer is transferred successfully to another silicon wafer capped with about 50 nm SiO2 by direct wafer bonding and hydrogen-induced layer transfer and formed the germanium-on-insulator (GOI) structure. The high mobility of germanium and the ability of germanium to absorb in the infrared make it a promising candidate in high-speed photodetector application. To reduce the surface roughness of germanium layer for decreasing the dark current, the second annealing in forming gas (i.e. H2 10%) is one of the workable methods.
Because the glass substrate can reach the goal of low cost and could be used for back incident application, the glass substrate is a good substitute for silicon wafer capped with SiO2. Etching the surface of germanium layer could decrease the dark current and increase the responsivity under the visible light exposure. The selectively etching on germanium-on-glass (GOG) structure can achieve visible light and infrared detection on the same chip with the unetched part for infrared detection and the etched part for visible light detection. Furthermore, the ohmic contact is exchanged from aluminum to indium-tin-oxide (ITO) to apply on the GOG substrate for back incident application. This germanium-on-ITO glass structure could be used for solar cell technology.
Afterward the polyimide substrate is combined with the techniques direct wafer bonding and hydrogen-induced layer transfer to fabricate the germanium-on- polyimide (GOP) structure and GOP MOS photodetector for the potential application in flexible electronics. That is feasible for its applications in portable and roll-able display, sensors/actuators, medical devices and RF identification.
Subjects
晶圓鍵結
絕緣層上覆鍺
光偵測器
康寧玻璃
銦錫氧化物
聚醯亞鞍膜
wafer bonding
GOI
photodetector
Corning glass
ITO
polyimide
Type
thesis
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