Ge quantum dots sandwiched between two thick Si blocking layers to increase high detectivity
Resource
Lasers and Electro-Optics, 2002. CLEO '02. Technical Digest. Summaries of Papers Presented at the
Journal
Lasers and Electro-Optics, 2002. CLEO '02. Technical Digest. Summaries of Papers Presented at the
Pages
-
Date Issued
2002
Date
2002
Author(s)
Peng, Y.H.
Chen, C.C.
Kuan, C.H.
Cheng, H.H.
DOI
N/A
Abstract
Summary from only given. Our Ge quantum dot IR photodetector (QDIP) shows a satisfactory detectivity. The responsivity is active in the 2 - 10 /spl mu/m under low biases and can be extended up to 20/spl mu/m under high biases.
Type
journal article
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