Brillouin Scattering Spectroscopy and Material Studies of InGaN, AlGaN, SiC and InGaN/GaN Multi-Quantum Wells Light Emitting Diodes
Date Issued
2010
Date
2010
Author(s)
Wu, Tsung-Han
Abstract
The III–V nitrides GaN, AlN, InN and their ternary compounds are of significant technological importance for semiconductor device applications in the blue and UV wavelengths, such as light-emitting diodes and semiconductor lasers. These nitrides possess large direct bandgaps, extremely high hardness, very large heterojunction offsets, high thermal conductivity and high melting temperature, which also make them promising candidates for high-temperature and high-power devices.
In chapter 3, we measured the Brillouin scattering spectroscopy of GaN, InGaN, and AlGaN. The Brillouin shift frequencies have obtained from the spectra, and the acoustic velocities can be calculated. Further, the elastic constants can be computed by Christiffel’s equation. The shifts of A1(LO) peak in Raman scattering spectroscopy can determine the aluminum contents in AlGaN sample. And X-ray diffraction (XRD) show us the sample’s crystallinity. In chapter 4, we discuss the distance between silicon atom and neighbor carbon atom by extended X-ray absorption fine structure, and try to realize how the nitrogen doped concentrations affect the Raman scattering spectrum. We investigate the InGaN/GaN multiple-quantum well with different growth direction in chapter 5. Via PL spectra to analyze the temperature-dependent emission energy. Besides, the temperature TRPL measurement results show that sample’s decay time.
Subjects
Brillouin
AlGaN
SiC
InGaN
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