Skip to main content
English
中文
Log In
Log in
Log in with ORCID
NTU Single Sign On
Have you forgotten your password?
Home
College of Electrical Engineering and Computer Science / 電機資訊學院
Photonics and Optoelectronics / 光電工程學研究所
Effect of rapid thermal annealing on carrier lifetimes of arsenic-ion-implanted GaAs
Details
Effect of rapid thermal annealing on carrier lifetimes of arsenic-ion-implanted GaAs
Journal
Applied Physics Letters
Journal Volume
69
Journal Issue
7
Pages
996-998
Date Issued
1996
Author(s)
Lin, G.-R.
Chen, W.-C.
Ganikhanov, F.
Chang, C.-S.
Pan, C.-L.
GONG-RU LIN
URI
http://www.scopus.com/inward/record.url?eid=2-s2.0-0000173763&partnerID=MN8TOARS
http://scholars.lib.ntu.edu.tw/handle/123456789/323938
Type
journal article