A 28-GHz Class-F Power Amplifier with 4096-QAM OFDM Under-36.2 dBc EVM in 28-nm CMOS Technology
Journal
2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021
Date Issued
2021
Author(s)
Abstract
A Ka-band 28-nm CMOS power amplifier (PA) has been proposed for 5G/B5G MMW high-speed applications. Under low supply voltage, 0.9-V, this PA achieves 22.5 dB of measured Gain, 37% Peak PAE and 12.3dBm OP1dB at 28 GHz. Besides, under 1024/4096-QAM OFDM digital modulation, this PA can maintain root-mean-square (rms) error vector magnitude (EVM) better than-35.35/-36.2 dB at 28 GHz. © 2021 IEEE.
Subjects
5G; Class-F; CMOS; millimeter-wave; Power amplifier
SDGs
Other Subjects
5G mobile communication systems; CMOS integrated circuits; Millimeter waves; Orthogonal frequency division multiplexing; Wave power; Class F power amplifier; Class-F; CMOS; CMOS power amplifiers; CMOS technology; Error vector; Higher speed applications; Ka band; Low supply voltages; Vector magnitude; Power amplifiers
Type
conference paper