Semiconductor circular ring lasers fabricated with the cryo-etching technique
Journal
IEEE Photonics Technology Letters
Journal Volume
10
Journal Issue
6
Pages
751-753
Date Issued
1998
Author(s)
Tsai, C.-H.
Lee, J.-H.
Chiang, H.-J.
Yang, C.C.
Shih, M.C.
Chen, B.C.
Chuang, T.J.
Abstract
GaAs-AlGaAs multiple quantum well semiconductor circular ring lasers with a /spl sigma/ shape were fabricated by using the deep UV laser-assisted cryo-etching technique. Most of the fabricated lasers had external quantum efficiencies of more than 18% which mere higher than similar devices previously reported. The modal spacing observed from the resonance spectrum near threshold was always several times that corresponding to the circular oscillation of the ring cavity. The observed modal spacing was quite consistent with the theoretical result based on a coupled-cavity model.
SDGs
Type
journal article