Formation of relaxed SiGe on the buffer consists of modified SiGe stacked layers by Si pre-intermixing

Resource

Applied Surface Science 254 (19): 6076-6080

Journal

Applied Surface Science

Journal Volume

254

Journal Issue

19

Pages

6076-6080

Date Issued

2008

Date

2008

Author(s)

Chen, P.S.

Lee, S.W.

Lee, M.H.

Liu, C.W.

URI

Type

journal article

File(s)

Name

85.pdf

Size

1.28 MB

Format

Adobe PDF

Checksum

(MD5):6768b12158fdd23bc49904983126ecd0