主動及被動CMOS 合成波導與電路
Date Issued
2005-07-31
Date
2005-07-31
Author(s)
莊晴光
DOI
932213E002136
Abstract
Advance in CMOS technology has
positioned CMOS RFIC a dominant IC
technology for transceiver block of RF signal
processing, replacing the bipolar and
GaAs-based IC technologies. Trend toward
higher microwave and millimeter-wave
regimes is expected for CMOS to take over
what were dominated by the III-V
technologies traditionally. The distributed
waveguides, therefore, become indispensable
for designing RF CMOS IC at higher
microwave and millimeter-wave frequencies,
since inter-stage matching is a necessity for
optimal RF signal processing.
Waves propagating in waveguides
integrated on CMOS, however, suffer serious
degradations in intolerably high attenuation
constant and limited range of characteristic
impedance. Both microstrip (MS) and
coplanar waveguide (CPW), thus, found
limited applications for CMOS RFIC designs.
This proposal aims to resolve the
above-mentioned issues that handicapped
CMOS RFIC design from lower to higher
microwave frequencies and beyond.synthetic CMOS waveguides covering DC to
millimeter- wave frequencies to improving
CMOS RF circuits and making new RFIC
designs and applications. Three regimes of
operation for synthesizing CMOS
waveguides are specified. First, a broadband,
DC to fa active CMOS waveguide is
presented. The upper frequency limit of fa is
5GHz for a typical 0.18μm CMOS
technology and fa will be higher when CMOS
technology advances further to finer
photolithography. The synthetic active
CMOS waveguide is a periodical guiding
structure made of a collection of unit cells,
which consists of passive, synthetic
complementary-conducting-strips (CCS)
waveguide (ROC patent approved, US patent
pending) and active negative differential
resistance device. To our best knowledge,
this is the world’s first guiding structure
exhibiting loss-free characteristics.
Second is the millimeter-wave CMOS
waveguides above fp, which is the lower
bound frequency of passive CMOS
waveguides and is typically at 60GHz. Near
fp current 0.18μm CMOS technology is
stretched to limit, showing little gain
available for RF integration. Thus attention
will be focused on passive RF signal
processing units on CMOS IC, above fp.
Between fa and fp is a wide spectrum for a
variety of microwave and millimeter-wave
RF communication systems. In this regime, a
synthetic active waveguide is proposed for
narrowband applications.
This proposal covers three years of
continuing efforts on basic researches for
CMOS waveguides. The targeted
achievements include (a) synthetic,
miniaturized, loss-free waveguides /
transmission lines for f ∈ (0, fa), (b)
synthetic, multi-dimensional, low-loss
waveguides and transitions for f > fp, (c)
synthetic, narrowband, low-loss, active
waveguide for f ∈ (fa, fp). Applications of
the synthetic active/passive CMOS
waveguides are numerous and not included
in the scope of this proposal. When
applicable, however, the conducted
researches may generate useful results for
smart antenna and RFIC designs, etc.
The researches are evenly distributed into
a three-year period. Year 1 will focus on
general design considerations of synthetic
CMOS waveguides for f ∈ (0, fa) and f > fp.
Year 2 will emphasize on synthetic CMOS
waveguides for f ∈ (fa, fp) and continue the
researches on the other bands. Year 3 intends
to design transmission line/waveguide
circuits that will demonstrate the
applicability of concepts of synthetic CMOS
waveguides from lower microwave
frequencies to millimeter-wave regime.
Subjects
Synthetic CMOS waveguides
Complementary -conducting-strips
Publisher
臺北市：國立臺灣大學電信工程學研究所
Type
report
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