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College of Electrical Engineering and Computer Science / 電機資訊學院
Photonics and Optoelectronics / 光電工程學研究所
High-electron-mobility GaN grown on free-standing GaN templates by ammonia-based molecular beam epitaxy
Details
High-electron-mobility GaN grown on free-standing GaN templates by ammonia-based molecular beam epitaxy
Journal
Journal of Applied Physics
Journal Volume
115
Journal Issue
19
Date Issued
2014
Author(s)
Kyle, Erin C. H.
Kaun, Stephen W.
Burke, Peter G.
Wu, Feng
Wu, Yuh-Renn
Speck, James S.
YUH-RENN WU
DOI
10.1063/1.4874735
URI
http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000336920200029&KeyUID=WOS:000336920200029
http://scholars.lib.ntu.edu.tw/handle/123456789/384955
Type
journal article