A Nonlinear Surface-Field Compact Model for Juinctionless Nanowire MOSFET
Journal
Workshop on Microelectronics and Electron Devices (WMED)
Date Issued
2016-04
Author(s)
Abstract
A nonlinear surface-field-based model for heavily doped JL nanowire MOSFETs is developed. By introducing two specific transformation variables, the surface potential to the field (due to the mobile charge) are correlated by a simple algebraic relation. Without solving the electrostatic potential, a drain current model is derived by the Pao-Sah integral. A second-order correction is carried out to improve the model accuracy.
SDGs
Type
conference paper