Deposition of osmium thin films using pyrazolate complexes as CVD source reagents
Journal
Journal of Materials Chemistry
Journal Volume
12
Journal Issue
5
Pages
1363-1369
Date Issued
2002
Author(s)
Abstract
The reaction of Os3(CO)12 with 1.2 eq. of pyrazole (3,5-(CF3)2-pz)H at 190 °C affords triosmium complex Os3(CO)10(3,5-(CF3)2-pz)(μ-H) (1) as the isolable product. Upon further treatment with excess pyrazole (3,5-(CF3)2-pz)H under more forcing conditions, complex 1 converts to a diosmium pyrazolate complex [Os(CO)3(3,5-(CF3)2-pz)]2 (2) in high yield. These osmium complexes are characterized by spectroscopic methods and single crystal X-ray diffraction study, showing the expected triangular and linear Os–Os backbone and with one and two bridging pyrazolate ligands for complexes 1 and 2, respectively. The thermal properties are studied by TG analysis and the deposition experiments are carried out using a cold-wall CVD apparatus. The as-deposited thin films are characterized using XPS, XRD and SEM and electrical resistivity measurement. It seems that the Os metal thin films are best deposited at an optimal temperature of 450–500 °C and using complex 2 as the source reagent.
SDGs
Type
journal article