Fabrication of p-type SnO Thin-Film Transistors Using Sputtering and Practical Metal Electrodes
Journal
Japanese Journal of Applied Physics
Journal Volume
52
Journal Issue
5
Pages
05DC07
Date Issued
2013-03
Author(s)
Po-Ching Hsu
Wei-Chung Chen
Yu-Tang Tsai
Yen-Cheng Kung
Ching-Hsiang Chang
Chao-Jui Hsu
Chung-Chih Wu
Hsing-Hung Hsieh
Abstract
P-type thin-film transistors using polycrystalline tin monoxide (SnO) active layers were achieved by an industry-compatible sputtering technique with a SnO ceramic target. The SnO films clearly exhibited p-type conduction with the p-type Hall mobilities of 1–4 cm 2 V -1 s -1 and hole concentrations of 10 17 –10 18 cm -3 . The physical and chemical structures of SnO films were characterized by X-ray diffraction analysis and X-ray photoemission spectroscopy. It is concluded that amorphous and SnO-dominant films were obtained as deposited. Further annealing at ≤300 °C induces crystallization but no major chemical reaction. The transmission line method was adopted to characterize the contact resistance between SnO layers and various metal electrodes. Results show that Mo and Ni could be used as effective electrodes for p-type SnO, avoiding the use of noble metals. Finally, p-type SnO TFTs using practical metal electrodes were fabricated, where a field-effect mobility of up to 1.8 cm 2 V -1 s -1 and an on/off current ratio of >10 3 were achieved.
Type
journal article