GeSn-based p-i-n photodiodes with strained active layer on a Si wafer

Journal

Applied Physics Letters

Journal Volume

103

Journal Issue

23

Pages

231907

Date Issued

2013

Author(s)

Tseng, H. H.

Li, H.

Mashanov, V.

Yang, Y. J.

Cheng, H. H.

Chang, G. E.

Soref, R. A.

Sun, G.

DOI

10.1063/1.4840135

URI

https://scholars.lib.ntu.edu.tw/handle/123456789/448564

URL

http://aip.scitation.org/doi/10.1063/1.4840135

Type

journal article