Mode-Locking and Car r ier Dynamics of Semiconductor Laser s
Date Issued
1999-07-31
Date
1999-07-31
Author(s)
DOI
882112M002038
Abstract
A new mode-locking method named
self-hybrid mode-locking is explored. This
method uses RF modulation at the
subharmonic of pulse repetition frequency.
By suitable biasing condition, the carrier
density inside the gain media can be lower
than transparency carrier density, and the
gain medium will turn into a saturable
absorber. Both active and passive modelocking
mechanisms operate in the same gain
region without the necessity of additionally
integrated absorbers. With the same cavity
configuration, self-hybrid mode-locking can
generate pulses about two times shorter than
the traditional active mode-locking.
Subjects
Self-hybrid mode-locking
modelocking
semiconductor laser
Publisher
臺北市：國立臺灣大學光電工程學研究所
Type
report
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