Numerical Analysis of Optoelectronic Properties of InGaN/GaN Multiple Quantum Well
Date Issued
2008
Date
2008
Author(s)
Yang, Han-Wei
Abstract
In this thesis, we studied the spontaneous emission rate in InGaN/GaN mutiple quantum well (MQW) when we change the indium composition, temperature, well number, well width, barrier length, and injection carrier density. We used the Poisson equation to find out the band structure of the MQW and the Schrodinger equation to obtain the carrier distribution in the MQW. The Poisson and Schrodinger equation are solved self-consistently to get a converged solution of the system. We use the solution to calculate the spontaneous emission rate in an InGaN/GaN MQW LED. From the formula for calculating spontaneous emission rate, we find the overlap of electron and hole wavefunction, and the fermi distribution function of electrons and holes is strongly related to the strength of emission rate. The main factors influencing the emission rate will be discussed in this thesis. rom the simulation results, we find that when we change the indium composition, well width, barrier width, and the well number, the overlap of electrons and holes wavefunction play an important role. We think that due to the influence of piezoelectric polarization and the quantum confined Stark effect, the change of quantum well structures will affect the carrier distribution in the quantum well structures. Also, the influence of the temperature to the spontaneous emission rate is closely related to the Fermi-Dirac distribution of the carriers. With these information and the program we have developed, it is possible for us to design and improve the device performance.eywords : InGaN, GaN, quantum well, Poisson equation, Schr"{o}di- nger equation, spontaneous emission, LED.
Subjects
InGaN
GaN
quantum well
Poisson equation
Schrodinger equation
spontaneous emission
LED
Type
thesis
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