Silicon-based Visible and UV Sensor
|Keywords:||矽;紫外光感測器;光偵測器;金氧半穿隧二極體;Silicon;UV sensor;Photodetector;MOS tunneling diode||Issue Date:||2007||Abstract:||
本論文中，總共分兩大論點，分為模擬的部分和實驗的部分。 模擬的部分聚焦在矽的p-n 可見光及紫外光二極體，而實驗部分是有關於金氧半電容紫外光穿隧二極體。由於光吸收區域主要在空乏區內,設計時需要考慮吸收深度，即吸收係數的倒數。
The thesis is divided into two parts, simulation and experiment. The simulation part focuses on the silicon p-n visible/UV photodiode and the experiment part is related to the MOS UV tunneling photodetector respectively. Due to the photo-generation region mainly in the depletion region, the absorption length which is the reciprocal of the absorption coefficient needs to compare with this region in the design.
We use finger-shaped diodes to enhance the short-wavelength responsivity in the simulation, and then, the reduced responsivity can be obtained from the finger-shaped diode and the pinned photodiode. Thus, the UV photodetector based on silicon p-n junction is demonstrated. We also show MOS tunneling diode as a potential device to detect the UV radiation. Ag gate metal has a better performance prior to Al with a transmission loss at =320nm. By adjust the Ag thickness, the MOS tunneling diode allows the selectivity in the broad UV to UVB region.
The anti-reflection coating can enhance the detectors’ performance by reducing the reflectance. However, the interface-state traps need to be considered as the coating on the optical devices. We sows the traps will degrade the responsivity in the UV range while that in the visible still increase. Finally, we make conlusions and future work.
|Appears in Collections:||光電工程學研究所|
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