https://scholars.lib.ntu.edu.tw/handle/123456789/119630
標題: | 金氧矽發光二極體之製作與分析 Fabrication and Characterization of Electroluminescent Metal-Oxide-Semiconductor Silicon Tunneling Diodes |
作者: | 梁奕智 Liang, Eih-Zhe |
關鍵字: | 矽;發光二極體;Silicon;Light emitting diode | 公開日期: | 2006 | 摘要: | 本論文著重在金氧矽發光二極體之製作與分析,特別是使用二氧化矽奈米粒子作為氧化層的裝置。使用二氧化矽奈米粒子造成載子侷限,因而促進了發光效率。在金氧矽發光二極體中,放光-電流特性以及放光的頻率反應時間會隨注入電流而改變。根據這些特性,我們推導了一個載子動力模型來統一解釋電流-電壓特性、放光-電流特性、以及小信號放光頻率反應隨電流改變的關係。由此理論推斷出此裝置的放光效率為數十個百分比。我們在使用二氧化矽奈米粒子的金氧矽發光二極體中加入了矽奈米結構,來促進載子侷限,可增加百分之三十的發光效率。我們從載子動力模型發展出金氧矽發光二極體中的光增益模型,因而推導矽半導體中居量反轉的條件以及光增益係數。我們推導了金氧矽發光二極體中操作在不同的電壓與電流下的光增益係數,其數值在光子能量為矽能隙時約為1cm-1。在使用金氧矽發光二極體做為發光層的電激發矽波導中,要使受激放光發生,其 散射損失必須小於1cm-1。此條件等同於要求此波導的側璧之均方根粗糙度須小於1nm。我們發展了雷射重組的技術,能夠降低均方根粗糙度至0.239nm。 The fabrication and characterization of the electroluminescent metal-oxide-semiconductor tunneling diodes (MOS-TD) based on silicon are presented in this dissertation. A special case of MOS-TDs, which uses SiO2 nanoparticles as the oxide layer, is studied. The use of SiO2 nanoparticles results in carrier confinement and enhances light emission. In MOSTDs, the light-current relation, and the frequency response lifetime are found to vary with the injection current density. A carrier dynamic model based on characteristics of MOS-TDs is developed to explain the current-voltage relation, the light-current relation, and the small signal frequency response. The theoretical internal efficiency is estimated to be several tens of percents. A nanostructured MOS-TDs using SiO2 nanoparticles is fabricated to improve the carrier confinement and shows a 30% more light emission efficiency. An optical gain model in MOS-TDs is developed based on the carrier dynamic model. The criterion of population inversion and the optical gain coefficients in Si are derived. The optical gain coefficients are calculated at different voltages and currents in MOS-TDs, whose magnitudes are about 1 cm-1 at the silicon bandgap energy. For stimulated emission to occur in an electrically pumped Si waveguide, which uses the MOS-TD as the active region, the scattering loss has to be less than 1 cm-1. This corresponds to a root-mean-square (RMS) roughness of less than 1 nm at the waveguide sidewalls. A laser reformation technique capable of reducing the RMS roughness to 0.239nm is developed. |
URI: | http://ntur.lib.ntu.edu.tw//handle/246246/50695 | 其他識別: | en-US |
顯示於: | 光電工程學研究所 |
檔案 | 描述 | 大小 | 格式 | |
---|---|---|---|---|
ntu-95-F89941012-1.pdf | 23.31 kB | Adobe PDF | 檢視/開啟 |
在 IR 系統中的文件,除了特別指名其著作權條款之外,均受到著作權保護,並且保留所有的權利。