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1.57 L. Krestnikov, N. N. Ledentsov, A. Hoffmann, D. Bimberg, A. V. Sakharov, W. V. Lundin, A. F. Tsatsu’nikov, A. S. Usikov, Zh. I. Alferov, Yu. G. Musikhin, and D. Gerthsen, “Quantum dot origin of luminescence in InGaN-GaN structures,” Phys. Rev. B 66, 155310 (2002).
1.58 S. W. Feng, Y. C. Cheng, Y. Y. Chung, E. C. Lin, C. C. Yang, C. C. Yan, Y. S. Lin, C. Hsu, K. J. Ma and H. X. Jiang, “Strong green luminescence in quaternary InAlGaN thin films,” Appl. Phys. Lett. 82, 1377 (2003).
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1.60 S. W. Feng, E. C. Lin, T. Y. Tang, Y. C. Cheng, H. C. Wang, C. C. Yang, K. J. Ma, C. H. Shen, L. C. Chen, K. H. Kim, J. Y. Lin, and H. X. Jiang, “Thermal annealing effects on an InGaN film with an average indium mole fraction of 0.31,” Appl. Phys. Lett. 83, 3906 (2003).
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4.4 X. Q. Shen, M. Shimizu, H. Okumura, and F. Sasaki, “Stimulated-emission phenomena from InGaN/GaN multiple-quantum wells grown by plasma-assisted molecular-beam epitaxy,” Appl. Phys. Lett. 79, 1599 (2001)
4.5 C. C. Chen, K. L. Hsieh, G. C. Chi, C. C. Chuo, J. I. Chyi, and C. A. Chang, “Effect of thermal annealing on high indium content InGaN/GaN single quantum well structures,” J. Appl. Phys. 89, 5465 (2001)
4.6 Y. C. Cheng, E. C. Lin, S. W. Feng, H. C. Wang, C. C. Yang, K. J. Ma, C. C. Pan, J. I. Chyi, “Characteristics of amplified spontaneous emission of high indium content InGaN/GaN quantum wells with various silicon doping conditions,” Phys. Stat. Sol (c). 0, 2670, (2003)
4.7 Y. C. Cheng, E. C. Lin, C. M. Wu, C. C. Yang, J. R. Yang, A. Rosenauer, K. J. Ma, S. C. Shi, L. C. Chen, C. C. Pan and J. I. Chyi, “Nanostructures and carrier localization behaviors of green-luminescence InGaN/GaN quantum-well structures of various silicon-doping conditions,” Appl. Phys. Lett. 84, 2506 (2004)
5.1 S. H. Park and S. L. Chuang, “Comparison of zinc-blende and wurtzite GaN semiconductors with spontaneous polarization and piezoelectric field effects,” J. Appl. Phys. 87, 353 (2000).
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5.3 S. Yu. Karpov, “Suppression of phase separation in InGaN due to elastic strain,” J. Nitride Semicond. Res. 3, 1 (1998).
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5.5 K. Kusakabe and K. Ohkawa, “X-ray diffraction study of InGaN/GaN superlattice interfaces,” J. Vac. Sci. Technol. B 21, 1839 (2003)
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5.14 Y. T. Moon, D. J. Kim, K. M. Song, C. J. Choi, S. H. Han, T. Y. Seong, and S. J. Park, “Effects of thermal and hydrogen treatment on indium segregation in InGaN/GaN multiple quantum wells,” J. Appl. Phys. 89, 6514 (2001)
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