Al0.35Ga0.65As/Al0.05Ga0.95As/Al0.35Ga0.65As Quantum Well Structure Grown by Liquid Phase Epitaxy
Resource
The 1988 International Electronic Devices and Materials Symposium, Kaohsiung(1988)
Proceeding of the 1988 International Electronci Devices and Materials Symposium, p.92-96
Journal
The 1988 International Electronic Devices and Materials Symposium
Pages
-
Date Issued
1988
Date
1988
Author(s)
Lee, Si-Chen
Lin, Hao-Hsiung
Publisher
Kaohsiung
Type
conference paper