Heavily Doping of GaAs with be for Application to p+-type AlGaAs/GaAs Heterojunction Infrared Detector
Resource
The 1991 International Conference on Solid State Devices and Materials, Yokohama, Japan(1991)
The 1991 International Conference on Solid State Devices and Materials, p.534-536
Journal
The 1991 International Conference on Solid State Devices and Materials
Pages
-
Date Issued
1991
Date
1991
Author(s)
Description
Yokohama
Type
conference paper