https://scholars.lib.ntu.edu.tw/handle/123456789/119817| Title: | Reliable C-V Characterization of MOS Capacitors by Initial Treatment at the Presence of Slow Interface States | Authors: | 胡振國 Lin, J. J. 王維新 Hwu, Jenn-Gwo Wang, Way-Seen |
Issue Date: | 1989 | Start page/Pages: | 78-81 | Source: | Proceedings of Electronic Devices and Materials Symposium | URI: | http://ntur.lib.ntu.edu.tw//handle/246246/140562 |
| Appears in Collections: | 光電工程學研究所 |
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