https://scholars.lib.ntu.edu.tw/handle/123456789/119817
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | 胡振國 | zh_TW |
dc.contributor.author | Lin, J. J. | zh_TW |
dc.contributor.author | 王維新 | zh_TW |
dc.contributor.author | Hwu, Jenn-Gwo | en |
dc.contributor.author | Wang, Way-Seen | en |
dc.creator | Hwu, Jenn-Gwo; Wang, Way-Seen; Lin, J. J. | - |
dc.date | 1989 | en |
dc.date.accessioned | 2009-02-24T08:12:46Z | - |
dc.date.accessioned | 2018-07-05T02:38:44Z | - |
dc.date.available | 2009-02-24T08:12:46Z | - |
dc.date.available | 2018-07-05T02:38:44Z | - |
dc.date.issued | 1989 | - |
dc.identifier.uri | http://ntur.lib.ntu.edu.tw//handle/246246/140562 | - |
dc.language | en | en |
dc.language.iso | en_US | - |
dc.relation | Proceedings of Electronic Devices and Materials Symposium, p.78-81 | en |
dc.relation.ispartof | Proceedings of Electronic Devices and Materials Symposium | - |
dc.title | Reliable C-V Characterization of MOS Capacitors by Initial Treatment at the Presence of Slow Interface States | en |
dc.type | conference paper | en |
dc.relation.pages | 78-81 | - |
item.openairetype | conference paper | - |
item.fulltext | no fulltext | - |
item.openairecristype | http://purl.org/coar/resource_type/c_5794 | - |
item.grantfulltext | none | - |
item.languageiso639-1 | en_US | - |
item.cerifentitytype | Publications | - |
crisitem.author.dept | Electrical Engineering | - |
crisitem.author.dept | Electronics Engineering | - |
crisitem.author.dept | Electrical Engineering | - |
crisitem.author.dept | Electronics Engineering | - |
crisitem.author.orcid | 0000-0001-9688-0812 | - |
crisitem.author.orcid | 0000-0001-9688-0812 | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
顯示於: | 光電工程學研究所 |
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