https://scholars.lib.ntu.edu.tw/handle/123456789/119898
標題: | Deep ultraviolet enhanced wet chemical oxidation and etching of gallium nitride | 作者: | LUNG-HAN PENG Chuang, C.-W. Hsu, Y.-C. Ho, J.-K. Huang, C.-N. Chen, C.-Y. |
公開日期: | 五月-1998 | 起(迄)頁: | 153 | 來源出版物: | Conference on Lasers and Electro-Optics Europe - Technical Digest | 會議論文: | Proceedings of the 1998 Conference on Lasers and Electro-Optics, CLEO | 摘要: | The use of deep ultraviolet irradiation to enhance the oxidative-dissolution process in the photoelectrochemical etching of gallium is nitride is presented. Study indicates that the hydration effect plays an important roles in establishing a peak etch rate as high as 90 nm/min. and 120 nm/min. in aqueous potassium hydroxide and phosphorous acid solutions at pH = 14.25 and 0.75, respectively. |
URI: | http://ntur.lib.ntu.edu.tw//handle/246246/2007041910021814 https://www.scopus.com/inward/record.uri?eid=2-s2.0-0031633250&doi=10.1109%2fcleo.1998.675987&partnerID=40&md5=6c1d56bf8946ac18dab7560d63f1480e |
其他識別: | N/A | DOI: | 10.1109/CLEO.1998.675987 | SDG/關鍵字: | Etching; Hydration; Irradiation; Mathematical models; Oxidation; pH; Phosphoric acid; Photochemical reactions; Potassium compounds; Reaction kinetics; Solutions; Ultraviolet radiation; Energy dispersion x ray analysis; Gallium nitride; Hydration model; Peaking effect; pH dependence; Photoelectrochemical etching; Potassium hydroxide; Wet chemical etching; Semiconducting gallium compounds |
顯示於: | 光電工程學研究所 |
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