https://scholars.lib.ntu.edu.tw/handle/123456789/119971
DC 欄位 | 值 | 語言 |
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dc.contributor | 管傑雄 | en |
dc.contributor | 臺灣大學:光電工程學研究所 | zh_TW |
dc.contributor.author | 張輔琮 | zh |
dc.contributor.author | Jhang, Fu-Tsung | en |
dc.creator | 張輔琮 | zh |
dc.creator | Jhang, Fu-Tsung | en |
dc.date | 2004 | en |
dc.date.accessioned | 2007-11-25T23:31:54Z | - |
dc.date.accessioned | 2018-07-05T02:43:20Z | - |
dc.date.available | 2007-11-25T23:31:54Z | - |
dc.date.available | 2018-07-05T02:43:20Z | - |
dc.date.issued | 2004 | - |
dc.identifier | en-US | en |
dc.identifier.uri | http://ntur.lib.ntu.edu.tw//handle/246246/50743 | - |
dc.description.abstract | With the development of novel semiconductor industry, the sizes of IC devices have been scaled down and the signal is very small during the transmission between these devices. For this reason, background limit performance (BLIP) of a photodetector is more important than the value of responsivity. Schottky contact functions as a large resistance with series connection to the structure of a SLIP, and response (means current in this thesis) of the SLIP is very small due to the low bias voltage applied to the active region. In this thesis, we use metal-semiconductor Schottky barrier to reduce the dark current and to provide a large resistance. | en |
dc.description.tableofcontents | 英文摘要 I 中文摘要 II Table Captions…………………………………………………………3 Figure Captions…………………………………………………………4 Chapter 1: Introduction…………………………………………………………6 References……………………………………………………………………………8 Chapter 2: Ge Superlattice Infrared Photodetector with Schottky Barrier …………………………………………………………………9 2.1 Background of Infrared Photodetector…………………………………………9 (I) Blackbody radiation …………………………………………………………9 (II) Infrared Photodetector ………………………………………………………10 (a) Quantum Well and Superlattice Structure …………………………………10 (b) Superlattice Infrared Photodetector ………………………………………11 2.2 Sample Strucutre ………………………………………………………………13 2.3 Ge Superlattice Infrared Photodetector with a Schottky Contact ………………14 2.4 Figure of Merit …………………………………………………………………15 References …………………………………………………………………………19 Chapter 3: Fabrication Process of a Schottky Ge SLIP and Measurement Instrument Setup ……………………………………………………20 3.1 Device Process 1 ………………………………………………………………20 3.2 Device Process 2 ………………………………………………………………25 3.3 Characterization Measurements …………………………………………………28 1. Current-Voltage (I-V) …………………………………………………………28 2. Relative Spectral Response and Absolute Responsivity ……………………29 References …………………………………………………………………………39 Chapter 4: Experimental Results and Discussion …………………………40 4.1 The Perspective for Schottky Barrier on Ge Infrared Photodetector……………40 4.2 Current-Voltage Characteristics ………………………………………………41 (I) Mechanism of Dark Current Flowing through a Schottky Barrier …………41 (II) Current-Voltage Measurement ……………………………………………44 4.3 Responsivity and Detectivity ……………………………………………………47 References …………………………………………………………………………68 Chapter 5: Conclusion …………………………………………………………69 | zh_TW |
dc.format.extent | 1212869 bytes | - |
dc.format.mimetype | application/pdf | - |
dc.language | en-US | en |
dc.language.iso | en_US | - |
dc.subject | 暗電流 | en |
dc.subject | 蕭基接面 | en |
dc.subject | 超晶格 | en |
dc.subject | 背景限制溫度 | en |
dc.subject | Dark current | en |
dc.subject | superlattice | en |
dc.subject | Schottky contact | en |
dc.subject | Background Limited Performance | en |
dc.title | 矽鍺超晶格紅外線偵測器以蕭基位能障提高背景限制溫度 | zh_TW |
dc.title | SiGe Superlattice Infrared Photodetector with Schottky Barrier for Background Limited Performance at High Temperature | en |
dc.type | thesis | en |
dc.identifier.uri.fulltext | http://ntur.lib.ntu.edu.tw/bitstream/246246/50743/1/ntu-93-R91941020-1.pdf | - |
dc.relation.reference | C. J. Chen, K. K. Choi, W. H. Chang and D. C. Tsui, Appl. Phys. Lett. 72, 7 (1998). S. D. Gunapala et al., Quantum well infrared photodetector research and development at jet propulsionlaboratory, SPIE Conference on Infrared Detectors and Focal Plane Arrays V, 3379 (April 1998). K. M. S. Bandara et al., Appl. Phys. Lett. 60, pp.3022-3024 (1992). Optical Radiation Detectors, edited by Eustance L. Dereniak and Devon G. Crowe (John Wiley & Sons, Inc., New York, 1984). The Physics of Quantum Well Infrared Photodetectors, edited by K. K. Choi (1997). L. C. West and S. J. Eglash, Appl. Phys. Lett. 46, 1156 (1983). Intersubband Transitions in Quantum Wells: Physics and Device Application I V62, edited by H. C. Liu and Federico Capasso (CA : Academic, San Diego, 2000). M. Sassoli De Bianchi, M. Di Ventra, Superlattices and Microstructures, 20, 2 ,pp.149 (1996). B. F. Levine, J. Appl. Phys. 74, pp.R1-R8 (1003). C. C. Chen, H. C. Chen, M. C. Hsu, W. H. Hsieh, C. H. Kuan, S. Y. Wang, and C. P. Lee, J. Appl. Phys. 91, 3, pp.943 (2002). D. K. Navak, K. Kamjoo, J. S. ParK, K. L. Wang and J. C. Woo, Appl. Phys. Lett. 57, 369 (1990) Thin Film Process, edited by J. L. Vossen and W. Kern (New York: Academic Press, 1978) H. Robbins and B. Schwartz, J. Electrochem. Soc. 106, 505 (1959) S. Gunapala, G. Sarusi, J. Park, T. L. Lin, and B. Levine, Infrared detectors reach new lengths, Phys. World 7, 35 (December 1994). N. E. I. Etteh and P. Harrison, Carrier scattering approach to the origins of the dark current in mid- and far-infrared (terahertz) quantum well intersubband photodetectors (QWIPs), IEEE J. Quantum Electron. 37, 672 (May 2001). Intersubband Transitions in Quantum Wells: Physics and Device Application I V.62, edited by H. C. Liu and Federico Capasso (CA: Academic, San Diego, 2000). M. A. Gadir, P. Harrison and R. A. Soref, Arguments for p-type Si1-xGex/Si quantum well photodetectors for the far- and very-far (terahertz)-infrared, Superlattices and Microstructures, Vol. 30, No. 3, 2001. V. L. Rideout and C.R. Crowell, Effects of image force and tunneling on current transport in metal -semiconductor (Schottky barrier) contacts, Solid-State Electron. Vol. 13, pp. 993-1009, 1970. | en |
item.openairetype | thesis | - |
item.openairecristype | http://purl.org/coar/resource_type/c_46ec | - |
item.cerifentitytype | Publications | - |
item.languageiso639-1 | en_US | - |
item.fulltext | with fulltext | - |
item.grantfulltext | open | - |
顯示於: | 光電工程學研究所 |
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ntu-93-R91941020-1.pdf | 23.31 kB | Adobe PDF | 檢視/開啟 |
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