Wet etching of patterned sapphire substrates
Date Issued
2007
Date
2007
Author(s)
Wu, Chih-Ling
DOI
zh-TW
Abstract
For last few years, there have been lots of progresses on InGaN/GaN-based light-emitting diodes (LEDs). Many new applications based on these LEDs including traffic light, backlight of TFT-LCD and some lighting applications, have been developed owing to the merits of LEDs, such as high-brightness, long-lifetime and high stability. However, for future illumination applications, it is very important to further enhance the external quantum efficiency of LED.
In this research, patterned sapphire substrates were fabricated with wet chemical etching technology. A 3H2SO4：1H3PO4 volume mixture was used as the etchant. Compared to the dry etching, wet etching had several merits, such as simpler process, higher etching rate, pit–free etching surface and lower cost. With proper treatment, very high etching rate with smooth and pit-free surface was obtained. The highest etching rate we measured was above 3μm/min. The relation between etching rates and temperatures is investigated in this work. At the same time, different geometrical patterned sapphire substrate is manufactured with different etching conditions. For further LEPS (Lateral Epitaxy on Patterned Substrate) technique, we can design the mask pattern to get patterned sapphire substrate we want.
Subjects
濕蝕刻
側向磊晶
圖案化藍寶石基板
wet etching
lateral epitaxy
patterned sapphire substrate
Type
thesis
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