Wet etching of patterned sapphire substrates
|Keywords:||濕蝕刻;側向磊晶;圖案化藍寶石基板;wet etching;lateral epitaxy;patterned sapphire substrate||Issue Date:||2007||Abstract:||
近年來，以InGaN/GaN為主的發光二極體(light-emitting diode, LED)有很大的進展。由於LED具備高亮度、壽命長以及高的穩定性，許多LED的新應用包括交通號誌燈、液晶螢幕的背光源以及一些發光上的應用已經被開發出來了。然而，為了未來的照明上的應用，更加增進LED的外部量子效率是非常重要的。
For last few years, there have been lots of progresses on InGaN/GaN-based light-emitting diodes (LEDs). Many new applications based on these LEDs including traffic light, backlight of TFT-LCD and some lighting applications, have been developed owing to the merits of LEDs, such as high-brightness, long-lifetime and high stability. However, for future illumination applications, it is very important to further enhance the external quantum efficiency of LED.
In this research, patterned sapphire substrates were fabricated with wet chemical etching technology. A 3H2SO4：1H3PO4 volume mixture was used as the etchant. Compared to the dry etching, wet etching had several merits, such as simpler process, higher etching rate, pit–free etching surface and lower cost. With proper treatment, very high etching rate with smooth and pit-free surface was obtained. The highest etching rate we measured was above 3μm/min. The relation between etching rates and temperatures is investigated in this work. At the same time, different geometrical patterned sapphire substrate is manufactured with different etching conditions. For further LEPS (Lateral Epitaxy on Patterned Substrate) technique, we can design the mask pattern to get patterned sapphire substrate we want.
|Appears in Collections:||光電工程學研究所|
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