https://scholars.lib.ntu.edu.tw/handle/123456789/120016
Title: | 在不同p-型層厚度氮化鎵發光二極體的p-型多重接觸電極之最佳化 Optimization of P-type Multi-Stripe Contacts on GaN Light Emitting Diodes with Various P-type Layer Thicknesses |
Authors: | 邱子揚 Chiu, Tzu-Yang |
Keywords: | 氮化鎵;發光二極體;電流擴散;熱穩定;GaN;LED;Current Spreading;Thermal stability | Issue Date: | 2006 | Abstract: | 我們計算以氮化鎵為主的p-型層多重接觸電極發光二極體的電流密度與載子密度分佈,我們同樣地畫出在不同p-型層厚度下,光輸出強度對各個接觸電極數目的圖形。由於p-型氮化鎵層的高電阻率,限制了電流與載子的擴散,也因此侷限了從氮化鎵發光二極體內部的p-型層上方發射光的擷取。本論文提供了一個數值方法來求得在不同p-型層厚度下,最佳的金屬接觸電極數目。 更進ㄧ步,我們探討了離子佈植在模擬與實驗上對元件在光輸出強度和熱穩定性上的影響,得知有離子佈植的元件會有較佳的光輸出強度與熱穩定性。 We calculate the distribution of current and carrier densities in the GaN based p-type multi-stripe contact LEDs. We also plot LED optical output intensities with various stripe numbers and p-type thicknesses. The high resistivity p-type GaN layer limits current and carrier spreading and thus limits the light extraction from top emitting GaN based LEDs inside the p-type layer with LED light extraction. The thesis provides a numerical method in determining optimum number of metal stripes for various p-type layer thicknesses. Furthermore, we discuss that the influence of device with and without ion implantation in simulation and experiment. Finally, the results show that the device with ion implantation gets better performances in optical output power and thermal stability. |
URI: | http://ntur.lib.ntu.edu.tw//handle/246246/50788 | Other Identifiers: | zh-TW |
Appears in Collections: | 光電工程學研究所 |
File | Description | Size | Format | |
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ntu-95-R93941050-1.pdf | 23.31 kB | Adobe PDF | View/Open |
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