https://scholars.lib.ntu.edu.tw/handle/123456789/120016
DC 欄位 | 值 | 語言 |
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dc.contributor | 黃建璋 | en |
dc.contributor | 臺灣大學:光電工程學研究所 | zh_TW |
dc.contributor.author | 邱子揚 | zh |
dc.contributor.author | Chiu, Tzu-Yang | en |
dc.creator | 邱子揚 | zh |
dc.creator | Chiu, Tzu-Yang | en |
dc.date | 2006 | en |
dc.date.accessioned | 2007-11-25T23:36:38Z | - |
dc.date.accessioned | 2018-07-05T02:44:00Z | - |
dc.date.available | 2007-11-25T23:36:38Z | - |
dc.date.available | 2018-07-05T02:44:00Z | - |
dc.date.issued | 2006 | - |
dc.identifier | zh-TW | en |
dc.identifier.uri | http://ntur.lib.ntu.edu.tw//handle/246246/50788 | - |
dc.description.abstract | 我們計算以氮化鎵為主的p-型層多重接觸電極發光二極體的電流密度與載子密度分佈,我們同樣地畫出在不同p-型層厚度下,光輸出強度對各個接觸電極數目的圖形。由於p-型氮化鎵層的高電阻率,限制了電流與載子的擴散,也因此侷限了從氮化鎵發光二極體內部的p-型層上方發射光的擷取。本論文提供了一個數值方法來求得在不同p-型層厚度下,最佳的金屬接觸電極數目。 更進ㄧ步,我們探討了離子佈植在模擬與實驗上對元件在光輸出強度和熱穩定性上的影響,得知有離子佈植的元件會有較佳的光輸出強度與熱穩定性。 | zh_TW |
dc.description.abstract | We calculate the distribution of current and carrier densities in the GaN based p-type multi-stripe contact LEDs. We also plot LED optical output intensities with various stripe numbers and p-type thicknesses. The high resistivity p-type GaN layer limits current and carrier spreading and thus limits the light extraction from top emitting GaN based LEDs inside the p-type layer with LED light extraction. The thesis provides a numerical method in determining optimum number of metal stripes for various p-type layer thicknesses. Furthermore, we discuss that the influence of device with and without ion implantation in simulation and experiment. Finally, the results show that the device with ion implantation gets better performances in optical output power and thermal stability. | en |
dc.description.tableofcontents | 第一章 序論………………………………………………… 1 1.1 前言 ………………………………………… 1 1.2 發光二極體簡介 …………………………… 3 1.3 電流擴散 …………………………………… 6 參考文獻…………………………………………… 8 第二章 數值方法 ………………………………………… 9 2.1 微分方程的分類 ………………………… 9 2.2 有限差分法 ………………………………11 2.3 橢圓型偏微分方程 ………………………14 2.4 非線性微分方程 …………………………18 2.5 數值方法的準確性 ………………………20 參考文獻………………………………………… 22 第三章 物理模型與理論模擬…………………………… 23 3.1 研究動機 …………………………………23 3.2 元件模型 …………………………………25 3.3 理論模擬 …………………………………27 3.3.1 電壓分佈計算………………… 27 3.3.2 載子分佈與發光強度擷取計算…28 3.4 模擬結果 …………………………………33 3.4.1 電壓分佈結果………………… 33 3.4.2 電流密度分佈結果…………… 34 3.4.3 載子密度分佈及發光強度結果…36 3.5 結果分析………………………………… 38 3.5.1 電流密度結果分析………… 38 3.5.2 發光強度結果分析………… 39 3.6 結論 ……………………………………… 42 參考文獻………………………………………… 43 第四章 變溫量測………………………………………… 45 4.1 實驗原理………………………………… 45 4.2 實驗裝置及實驗步驟…………………… 47 4.3 實驗與模擬的結果與分析……………… 49 參考文獻………………………………………… 55 第五章 總結……………………………………………… 56 | zh_TW |
dc.format.extent | 572461 bytes | - |
dc.format.mimetype | application/pdf | - |
dc.language | zh-TW | en |
dc.language.iso | en_US | - |
dc.subject | 氮化鎵 | en |
dc.subject | 發光二極體 | en |
dc.subject | 電流擴散 | en |
dc.subject | 熱穩定 | en |
dc.subject | GaN | en |
dc.subject | LED | en |
dc.subject | Current Spreading | en |
dc.subject | Thermal stability | en |
dc.title | 在不同p-型層厚度氮化鎵發光二極體的p-型多重接觸電極之最佳化 | zh |
dc.title | Optimization of P-type Multi-Stripe Contacts on GaN Light Emitting Diodes with Various P-type Layer Thicknesses | en |
dc.type | thesis | en |
dc.identifier.uri.fulltext | http://ntur.lib.ntu.edu.tw/bitstream/246246/50788/1/ntu-95-R93941050-1.pdf | - |
dc.relation.reference | [1] Arturas Zukauskas, Michael S. Shur, and Remis Gaska. Introduce to Solid-state Lighting. New York: Wiley&sons, 2002 [2] 史光國. 半導體發光二極體及固體照明. 全華, 2005 [3] Hong Xiao. Introduction to Semiconductor Manufacturing Technology. NJ: prentice-Hill, 2001 [4] 莊達人. VLSI製造技術. 高立, 2002 [5] Donald A. Neamen. Semiconductor Physics and Devices, 3th ed. New York: McGRAW-Hill, 2003 [6] E. Fred Schubert. Light Emitting Diodes. New York: Cambridge, 2003 [7] Hyunsoo Kim, Seong-Ju Park, and Hyunsang Hwang.”Effect of Current Spreading on the Performance GaN-Based Light-Emitting Diodes,” IEEE Trans. on electron devices, vol.48, pp.1065-1069, June 2001. [8] Dennis G. Zill, and Michael R. Cullen. Differential Equations with Boundary-Value Problems, 5th ed. CA: Brooks Cole, 2001 [9] George Lindfield, and John Penny. Numerical Methods using Matlab, 2th ed. NJ: prentice-Hill, 1999 [10] Richard L. Burden, and J. Douglas Faires. Numerical Analysis, 7th ed. CA: Brooks Cole, 2001 [11] Kumar, T., Ormondroyd, R., and Rozzi, T., “Interstripe coupling and current spreading in a subthreshold double heterostructure twin stripe laser,” IEEE J. Quantum Electron., Vol 20, pp. 364 - 373, Apr. 1984. [12] R.W. Chuang, A.Q. Zou, H.P. Lee, Z.J. Dong, F.F. Xiong, R. Shih, M. Bremser, and H. Juergensen, “Contact resistance of InGaN/GaN light emitting diodes grown on the production model multi-wafer MOVPE reactor,” [13] X.Guo, Y.L. Li, and E .F. Schubert, “Efficiency of GaN/InGaN light-emitting diodes with interdigitated mesa geometry,” Appl. Phys. Lett., vol. 79, pp. 1936-1938, 2001. [14] F.Karouta, M.J. Kappers, M. C. J. C. M. Krämer, and B. Jacobs, “Enhancement of p-GaN conductivity using PECVD SiOx,” Electrochemical and Solid-State Lett., vol. 8, pp.170-171, 2005. [15] X.Guo, and E .F. Schubert, “Current crowding in GaN/InGaN light emitting diodes on insulting substrates,” J. Appl. Phys., vol. 90, pp.4191-4195, 2001. [16] S. P. DenBaars, T. Katona, P. Cantu, A. Hanlon, S. Keller, M. Schmidt, T. Margalith, M. Pattisson, C. Moe, J. Speck, and S. Nakamura, “GaN based high brightness LEDs and UV LEDs,” Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International, pp. 16.1.1 - 16.1.3, Dec. 2003. [17] Kumar, T., Ormondroyd, R., and Rozzi, T., “Numerical solution of lateral current spreading and diffusion in near-threshold DH twin-stripe Lasers,” IEEE J. Quantum Electron., Vol 21, pp. 421- 433, May. 1985. [18] A. TOMCZYK, R.P. SARZA£A, T. CZYSZANOWSKI,M. WASIAK, and W.NAKWASKI, “Fully self-consistent three-dimensional model of edge-emitting nitride diode lasers,” OPTO-ELECTRONICS REVIEW, vol. 11, pp. 65–75, 2003. [19] Hong Xiao. Introduction to Semiconductor Manufacturing Technology.NJ:prentice-Hill, 2001 [20] 莊達人. VLSI製造技術. 高立, 2002 [21] Baijun Zhang, Takashi Egawa, Hiroyasu IshiKawa, Yang Liu, and Takashi Jimbo, ”Thermal stability of InGaN multiple-quantum well light-emitting diodes on an ALN/sapphire template,” J. Appl. Phys., vol. 95, pp.3170-3174, 2004. | zh_TW |
item.openairecristype | http://purl.org/coar/resource_type/c_46ec | - |
item.openairetype | thesis | - |
item.languageiso639-1 | en_US | - |
item.grantfulltext | open | - |
item.cerifentitytype | Publications | - |
item.fulltext | with fulltext | - |
顯示於: | 光電工程學研究所 |
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ntu-95-R93941050-1.pdf | 23.31 kB | Adobe PDF | 檢視/開啟 |
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