InN Thin Film Grown by MBE andt’s Optical and Electrical Properties

InN is the most promising material of nitride-based semiconductors. In this thesis, we use the molecular beam epitaxy(MBE) system to grow InN. The InN’s electrical and optical properties is improved by the plasma gun power variation. The possible reason is due to the nitrogen ion which is confirmed by the optical spectrum and X-ray photoelectron spectroscopy (XPS). Besides, the photoluminescence(PL) is different by the V/III ratio which is due to the In cluster. The near edge X-ray absorption fine spectroscopy (NEXAFS), absorption ,and Raman has been used to measure.