https://scholars.lib.ntu.edu.tw/handle/123456789/120708
標題: | Nano-structure Study of ZnO Thin Films on Sapphire Grown with Different Temperature Conditions | 作者: | CHIH-CHUNG YANG Yang, Jer-Ren et al. |
關鍵字: | A1. Exciton; A1. Growth temperature; A1. Nanostructure; A1. Photon emission efficiency; A1. Transmission electron microscopy; B1. ZnO | 公開日期: | 八月-2006 | 卷: | Vol. 293 | 期: | Issue 2 | 起(迄)頁: | 344-350 | 來源出版物: | Journal of Crystal Growth | 摘要: | We compared the nano-structures of three samples of ZnO thin film on sapphire under different growth temperature conditions. Although disconnected domain structures (on the scale of 100 nm in size) were observed in the samples of high-temperature (450 °C) growth, their crystal quality is generally better than the one grown at a low temperature (200 °C), either near or away from the sapphire interface. Lattice misfits and threading dislocations were observed within a domain with the separation of around 8 nm. The sample grown at the low temperature showed a continuous structure through the ZnO layer although void-like structures might exist inside. However, its crystal quality is relatively poorer. Of the two samples with high-temperature growth, the one with initial low-temperature growth had a larger domain structure (around 150 nm in size) and relatively lower crystal quality. In particular, strong strains existed near the interface of this sample. The samples of high-temperature growth generally have higher photon emission efficiencies. Temperature-dependent integrated photoluminescence intensities of the high-temperature-growth samples show that the exciton trapping by either intrinsic donors or acceptors leads to a higher thermal quenching rate in comparison with free excitons. © 2006 Elsevier B.V. All rights reserved. |
URI: | http://ntur.lib.ntu.edu.tw//handle/246246/205536 https://www.scopus.com/inward/record.uri?eid=2-s2.0-33746397039&doi=10.1016%2fj.jcrysgro.2006.05.043&partnerID=40&md5=dcea35f616ad68c37f6973c856fc1e8a |
ISSN: | 00220248 | SDG/關鍵字: | Excitons; Film growth; Nanostructured materials; Photons; Sapphire; Transmission electron microscopy; Zinc oxide; Crystal quality; Growth temperature; Photon emission efficiency; Threading dislocations; Thin films |
顯示於: | 光電工程學研究所 |
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