https://scholars.lib.ntu.edu.tw/handle/123456789/120866
標題: | Analysis of Strain Relaxation and Emission Spectrum of A Free-Standing GaN-based Nanopillar | 作者: | Wu, Yuh-Renn Ferguson, Ian T. Taguchi, Tsunemasa Yu, Peichen Chiu, C. H. Ashdown, Ian E. Park, Seong-Ju Chang, Cheng-Yu Kuo, H. C. |
關鍵字: | GaN; InGaN; Nanopillar; Nanorod; Strain relaxation; Valence force field model | 公開日期: | 八月-2008 | 起(迄)頁: | 70580G | 來源出版物: | Eighth International Conference on Solid State Lighting | 摘要: | We have made a GaN-based single nanopillar with a diameter of 300nm using the focused ion beam (FIB) technique. The micro-photoluminescence (μ-PL) from the embedded GaN/InGaN multi-quantum wells reveals a blue shift of 68.3 meV in energy. In order to explain the spectrum shift, we have developed a valence force field model to study the strain relaxation mechanism in a single GaN-based nanopillar structure. The strain distribution and strain induced polarization effect inside the multiple quantum wells is added to our self-consistent Poisson, drift-diffusion, and Schrodinger solver to study the spectrum shift of μ-PL. |
URI: | http://ntur.lib.ntu.edu.tw//handle/246246/205597 https://www.scopus.com/inward/record.uri?eid=2-s2.0-55549135353&doi=10.1117%2f12.800658&partnerID=40&md5=7e4dcf7fde4e08f9034de1bec87d10f5 |
ISSN: | 0277786X | DOI: | 10.1117/12.800658 | SDG/關鍵字: | Blue shifts; Emission spectrums; GaN; Gan/ingan; Induced polarizations; InGaN; Multiple quantum wells; Nanopillar; Nanopillar structures; Quantum wells; Spectrum shifts; Strain distributions; Strain relaxation mechanisms; Valence force field model; Valence force fields; Emission spectroscopy; Focused ion beams; Gallium alloys; Gallium nitride; Ion bombardment; Light emission; Luminescence; Poisson distribution; Semiconducting gallium; Semiconductor materials; Semiconductor quantum wires; Strain control; Strain relaxation; Water pollution; Wells; Semiconductor quantum wells |
顯示於: | 光電工程學研究所 |
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