Electrical and Optoelectronic Characterization of a ZnO Nanowire Contacted by Focused-Ion-Beam-Deposited Pt
Resource
Nanotechnology, 20(13), 135701
Journal
Nanotechnology
Pages
135701
Date Issued
2009
Date
2009
Author(s)
He, J.H.
Chang, P.H.
Chen, C.Y.
Tsai, K.T.
Abstract
We report on the transport properties of a single ZnO nanowire (NW) measured as a function of the length/square of the radius ratio via the transmission line method (TLM). The specific contact resistance of FIB-Pt contacts to the ZnO NWs is determined to be as low as 1.1 × 10 -5 Ω cm2. The resistivity of the ZnO NWs is measured to be 2.2 × 10-2 Ω cm. ZnO NW-based UV photodetectors contacted by FIB-Pt with a photoconductive gain as high as ∼108 have been fabricated and characterized. © 2009 IOP Publishing Ltd.
Type
journal article
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